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 BD142
NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS
LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO VCBO VEBO VCEX IC IB PT
Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Base Current Power Dissipation
Ratings
Value
45 50 7
Unit
V V V V A A Watts
VBE=-1.5 V
50
15 7
@ TC = 25
117
TJ
Junction Temperature
-65 to +200 TS
Storage Temperature
C
COMSET SEMICONDUCTORS
1/3
BD142
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
C/W
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCEO(BR)
Collector-Emitter Breakdown Voltage (*)
IC=200 mA, IB=0
45
V
VCEX(BR)
Collector-Emitter Breakdown Voltage (*)
IC=100 mA, VBE=-1.5 V
50
V
VCE(SAT)
Collector-Emitter Saturation IC=4 A, IB=0.4 A Voltage (*) Collector-Emitter Cutoff Current
-
-
1.1
V
ICEX
VCE= 40 V VBE=-1.5 V
-
-
2
mA
IEBO
Emitter-Base Cutoff Current
VEB=7 V
-
-
1
mA
VBE
Base-Emitter Voltage (*)
IC=4.0 A, VCE=4.0V
-
-
1.5
V
COMSET SEMICONDUCTORS
2/3
BD142
Symbol Ratings
Test Condition(s)
Min Typ Mx Unit
IS/B
Second Breakdown collector current
t=1s, VCE=39 V
3
-
-
A
VCE=4.0 V, IC=4.0 A
12.5
-
160 -
hFE
Static Forward Current Transfer Ratio (*)
VCE=4.0 V, IC=0.5 A 20
-
-
(*) Pulse Width 300 s, Duty Cycle 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
MECHANICAL DATA CASE TO-3
DIMENSIONS
A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector
COMSET SEMICONDUCTORS
3/3


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